| PART |
Description |
Maker |
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
| SPM3215 |
GaAs MMICs
|
SANYO
|
| BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie
Silicon MMICs - 25dB LNA, 0...3GHz, 50Ohm, SOT343
|
Infineon Technologies AG
|
| BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343
|
Infineon
|
| BGB540 BGA430 |
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
|
Infineon Technologies A...
|
| BGB540 |
Active Biased RF Transistor
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| SFH400 SFH401 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
